Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPM1R408RH,” an 80V N-channel power MOSFET fabricated using U-MOS11-H, Toshiba’s latest-generation process[1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in AI data centers and communications base stations. Shipments start today.
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Toshiba: 80V N-channel power MOSFET "TPM1R408RH," fabricated using U-MOS11-H, Toshiba’s latest-generation process.
The continuing expansion in AI processing has increased power demand in data centers, while advances in communications infrastructure have further intensified requirements for higher efficiency, smaller size (higher power density), and lower electromagnetic interference (EMI) in switched-mode power supplies. As power losses directly affect system power consumption, heat generation, and cooling load, it is important to deploy power semiconductors with characteristics that support a balanced reduction in conduction and switching losses and that contribute to overall system optimization, including improved EMI suppression, thermal design, and ease of mounting.
TPM1R408RH features an optimized device structure and realizes a drain-source On-resistance of 1.4mΩ (max)[2], approximately 26% lower than that of “TPM1R908QM,” an 80V Toshiba product fabricated using Toshiba’s previous-generation U-MOS X-H process. It also improves the trade-off between drain-source On-resistance (RDS(ON)) and total gate charge (Qg), achieving approximately a 45% reduction in the figure of merit, RDS(ON) × Qg over TPM1R908QM. These characteristics represent industry-leading[3] levels of low power loss.
TPM1R408RH also suppresses spike voltage generated between the drain and source during switching, helping to reduce EMI in switched-mode power supplies. EMI suppression often requires rework in later stages of design, but suppressing the device-originated spikes helps to reduce the rework and simplify filter and snubber circuits.
The new product adopts the SOP Advance(E) package, which delivers approximately 65% lower package resistance and approximately 15% lower thermal resistance than Toshiba’s current SOP Advance(N) package. By suppressing heat generation and improving heat dissipation, the package supports higher output and more compact power supply designs.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available. An online circuit simulator on the Toshiba website allows users to easily verify circuit operation in a web browser, with no need to set up a simulation environment or download device models. (Online circuit simulator: here)
Toshiba will continue to expand its lineup of power MOSFETs that improve power supply efficiency, thereby helping to reduce power consumption in industrial equipment.
Notes:
[1] As of June 2026, based on Toshiba’s low-voltage power MOSFET processes.
[2] VGS=10V, ID=50A, Ta=25°C
[3] Toshiba survey, as of June 2026.
Applications
Industrial Equipment
- Switched-mode power supplies for AI data centers and communications base stations
Features
- Low drain-source On-resistance: RDS(ON)=1.4mΩ (max) (VGS=10V, ID=50A, Ta=25°C)
- Low drain-source On-resistance × total gate charge: RDS(ON)×Qg＝1.4mΩ×80nC=112mΩ・nC (approximately 45% lower than 1.9 mΩ×108nC=205.2 mΩ・nC for TPM1R908QM)
- Adoption of the SOP Advance(E) package with low package resistance and low thermal resistance.
Main Specifications
(Unless otherwise specified, Ta=25°C) | ||||
Part number | ||||
Absolute maximum ratings | Drain-source voltage VDSS (V) | 80 | ||
Drain current (DC) ID (A) | Tc=25°C | 288 | ||
Channel temperature Tch (°C) | 175 | |||
Electrical characteristics | Drain-source On-resistance RDS(ON) (mΩ) | VGS=10V | Max | 1.4 |
VGS=8V | Max | 1.7 | ||
Total gate charge Qg (nC) | VGS=10V | Typ. | 80 | |
Gate switch charge Qsw (nC) | Typ. | 23 | ||
Output charge Qoss (nC) | Typ. | 161 | ||
Reverse recovery time trr (ns) | Typ. | 74 | ||
Reverse recovery charge Qrr (nC) | Typ. | 115 | ||
Package | Name | |||
Size (mm) | Typ. | 4.9×6.1×1.0 | ||
Sample Check & Availability | ||||
Follow the link below for more on the new product.
TPM1R408RH
Follow the link below for more on Toshiba’s MOSFETs.
MOSFETs
To check availability of the new product at online distributors, visit:
TPM1R408RH
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About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
Its 17,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.
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