Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment
By API User
KAWASAKI, Japan–BUSINESS WIRE– Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stationsand switching power supplies. Toshiba today started shipments of the ten new products in the series, … Continued